Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells

Abstract

Dilute nitride alloys have required postgrowth annealing to improve their luminescent efficiency. There exists an optimal annealing temperature that results in the highest photoluminescence intensity. Several series of GaInNAsSb samples with varying indium and antimony contents were grown to examine the effects of compositional and strain changes on this optimal annealing temperature. We show that a relationship exists between this temperature and the lattice strain of GaInNAsSb quantum wells. As strain increases in these alloys, the optimal annealing temperature decreases. Higher optimal anneal temperatures are found with lower lattice strain. This has important ramifications for the design of long-wavelength GaInNAsSb devices.