Abstract
Dilute nitride alloys have required postgrowth annealing to improve their luminescent efficiency. There exists an optimal annealing temperature that results in the highest photoluminescence intensity. Several series of GaInNAsSb samples with varying indium and antimony contents were grown to examine the effects of compositional and strain changes on this optimal annealing temperature. We show that a relationship exists between this temperature and the lattice strain of GaInNAsSb quantum wells. As strain increases in these alloys, the optimal annealing temperature decreases. Higher optimal anneal temperatures are found with lower lattice strain. This has important ramifications for the design of long-wavelength GaInNAsSb devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
