Effects of nitrogen in the Ga(N)As barrier of GaInNAsSb quantum wells

Abstract

We have investigated the effects of nitrogen in the Ga(N)As barrier of an 1.5-μm-emitting GaIn- NAsSb quantum well (QW) on the localization and the defect density. The QW with the GaNAs barrier emitted brighter photoluminescence at a longer wavelength at 10 K than the GaAs barrier and showed less carrier localization. The lifetime at 10 K was almost the same for the QWs both with and without nitrogen in the barrier, implying comparable defect densities. This result clearly supports that GaInNAsSb QWs with a GaNAs barrier can emit light at a longer wavelength without increasing either the defect density or the localization.