Effects of sputtering power on the formation of 5 nm thick ferroelectric nondoped HfO2 gate insulator for MFSFET application

Abstract

In this research, the effects of sputtering power on the ferroelectric property of 5 nm thick ferroelectric nondoped HfO2 were investigated for metal–ferroelectric–semiconductor field-effect-transistor application. The remnant polarization (2P r) was increased to 5.9 μC cm−2, and the density of interface states (D it) at silicon interface was effectively reduced to 1.8 × 1011 cm−2 eV−1 when the sputtering power was 50 W for 5 nm thick nondoped HfO2 formation. The largest Weibull slope (β) of 1.76 was extracted in Weibull distribution plot of the time-dependent dielectric breakdown measurements, and excellent fatigue properties until 1010 cycles were realized. The memory window of 0.56 V was realized by the pulse amplitude and width of −1/6 V and 100 ms, respectively. Furthermore, the memory characteristic was expected to be maintained ever after 10 years of retention time.