Abstract
Device scaling has been a critical topic of nonvolatile memory for high integration density, low operation voltage and high device speed. However, HfO2-based metal-ferroelectric-semiconductor field-effect-transistor (MFSFET) has an issue of gate leakage current when the ferroelectric HfO2 film thickness is reduced less than 10 nm. In this research, we realized the MFSFET with 5 nm thick ferroelectric nondoped HfO2 gate insulator for the first time by decreasing the sputtering power of Pt gate electrode deposition.
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