Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

Lin Lin,Chen Chen,Wu Wu

doi:10.3390/cryst9060318

Abstract

: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.

Highlights

As technology continues to advance, electronic products have become indispensable items in peoples’ lives
Typical bipolar resistive switching I-V curves for the Sm2 O3 and V2 O5 thin film resistive random access memories (RRAMs) devices are shown in Figure 2, and their bipolar switching characteristics were stable
In studies of vanadium oxide films, it has been observed that these films have a stable reversible switching characteristic, and the current can be controlled by setting the current limit during the set process to reduce the power consumption [8]

Summary

Introduction

As technology continues to advance, electronic products have become indispensable items in peoples’ lives. Memory capacity has a key impact on electronic computing speed and efficiency Due to their superior features, such as simple structure, low power consumption, high-speed operation, small device area, and nonvolatile properties, resistive random access memories (RRAMs) have attracted extensive attention for next-generation nonvolatile memory applications [1,2]. Sm2 O3 , one of the rare earth oxides (REOs), has a large energy band gap, high thermal stability, good chemical stability, good thermal stability, low leakage current density, high breakdown electric field, and low trapping rates Because of these superior properties, Sm2 O3 has been investigated as a high-k material which could replace SiO2 in Complementary Metal-Oxide-Semiconductor (CMOS). It would be advantageous to develop scalable RRAM devices exhibiting both bipolar and unipolar switching behaviors

Experimental

Results and Discussion

Conclusions