Abstract
Effects of carbon, boron, and EL2 concentrations in undoped semi-insulating GaAs crystal on silicon-implanted active layers are quantitatively examined. The mechanisms for these effects are investigated. Reducing carbon and boron concentrations, growing crystal from a near-stoichiometric melt, and boule annealing all improve the uniformity in silicon-implanted active layers formed on undoped semi-insulating GaAs substrates. Seed-to-tail uniformity within boule and boule-to-boule uniformity are also improved. These undoped semi-insulating GaAs substrates are promising for IC applications. The reliable supply of GaAs substrates is moving high-performance GaAs devices into manufacturing. >
Published Version
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