Abstract
This paper presents results of experimental determination of free carrier concentration ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</tex> ) and mobility (µ) profiles in silicon ion-implanted layers on different types of semi-insulating GaAs substrates at room and liquid-nitrogen temperatures. The measurement utilizes long-channel FET test structures and an RF transformer ratio-arm bridge. The effective background compensating acceptor concentration profiles have also been determined by comparing the experimental µ versus n plots with the published theoretical results for different compensation ratio values. The results indicate that boron nitride crucible grown GaAs substrates can provide high mobility and low compensating background acceptor concentration profiles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
