Abstract
The influence of rapid thermal annealing on structural, luminescent, and electrical properties of Al-doped ZnO film grown by atomic layer deposition is investigated. The (100) diffraction peaks show a systematic shift to higher 2θ values for the samples annealed in the temperatures of 400–700°C. The photoluminescence spectra reveal that the UV emission intensity slightly decreases as the annealing temperature increases up to 600°C and then increases significantly after the film is annealed in the temperature range of 700 ∼ 800°C. In addition, the resistivity of the film increases gradually with elevated annealing temperature, which is attributed to the decrease of the carrier concentration and mobility.
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