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Abstract
We studied the effects of rapid thermal annealing in different ambients on the structural, electrical and optical properties of the sol-gel derived ZnO thin films. All the films after annealing showed highly degree of (002) oriented in the X-ray diffractometry (XRD) patterns. The effects of annealing ambients on electrical properties of the films were studied. Carrier concentration, resistivity and mobility were found to be distinguished after annealed in different ambients. The sample with the lowest resistivity of 0.095 Ω·cm and the largest mobility of 105.1 cm2/v·s was achieved after annealing in vacuum. XPS results indicated that more oxygen vacancies existed on the ZnO surface when annealed in vacuum than that in O2.
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