Abstract
Metal-oxide-semiconductor characteristics of MOD-derived lanthanum cerium oxide (LaxCeyOz) film deposited on n-type Si substrate have been studied. Post-deposition annealing of the oxide was performed in argon atmosphere for a dwell time, ranging from 15 to 120 min at a fixed temperature of 400°C. Results demonstrated presence of positively charged oxygen vacancies in all of the oxides post-deposition annealed for different dwell time. Acquisition of the lowest effective oxide charge as well as the lowest interface trap density and total interface trap density in oxide annealed for 120 min has led to the attainment of the highest breakdown voltage, surpassing other oxides.
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