Abstract
Metal-organic decomposed lanthanum cerium oxide (La x Ce y O z ) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor (MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, La x Ce y O z demonstrated a decrease in interface trap density (D it) and total interface trap density (D total), which were related to the formation of SiO x /silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (V B) was obtained in 1000°C-annealed sample. When longer annealing times (30–120 minutes) were studied on the 1000°C-annealed sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with V B of 30 V. Reasons contributing to such observation were discussed.
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