Abstract
YMnO 3 thin films deposited on Si (1 0 0) substrate by rf-sputtering were annealed with various conditions. YMnO 3 films annealed in a furnace had a c-axis preferred orientation and the films annealed in a rapid thermal processor (RTP) had random orientations. However, cracks were observed in the highly c-axis oriented YMnO 3 films. YMnO 3 films annealed in the furnace showed poor ferroelectric characteristics. However, YMnO 3 films annealed in the RTP showed a ferroelectric C– V hysteresis with 1.5 V memory window at 0.2 V/s sweep rate. Since the thermal expansion of a-axis is five times higher than that of c-axis in the YMnO 3 thin films, the c-axis oriented thin films are expected to be easily cracked during the post-annealing process. Moreover, the rapid thermal annealing process effectively suppressed the increase of a native SiO 2 thickness in the YMnO 3/Si structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
