Abstract
YMnO 3 thin films have been sputtered on Si(1 0 0) substrates under different ambient conditions. Microstructures of the YMnO 3 thin films have been investigated with transmission electron microscopy (TEM) after a rapid thermal annealing process at 850°C in N 2 ambient. The YMnO 3 film deposited in Ar ambient had random orientations. However, two layers were apparently formed in the YMnO 3 film deposited in Ar+O 2 ambient. One was a c-axis oriented YMnO 3 layer in the top region and the other was a random oriented YMnO 3 layer in the bottom region, which was clearly elucidated by a dark-field TEM image. As the c-axis oriented YMnO 3 layer was formed on the poly-YMnO 3 layer, stress by thermal expansion difference was relieved and no crack was formed. The memory window was improved due to the partial c-axis oriented YMnO 3 layer.
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