Abstract
Lanthanum cerium oxide (La xCe yO z) precursor was prepared using metal-organic decomposition method. The effects of post-deposition annealing temperatures (400–1000 °C) and annealing time (15–120 min) in argon ambient on physical properties of the deposited film were investigated. X-ray diffraction was employed to detect the presence of phase and crystal orientation in the films. Williamson–Hall plot was used to determine the grain size and microstrains of the film. The grain size increased with the increase of annealing temperature and time while microstrains showed an inverse relationship. High resolution transmission electron microscopy (HRTEM) revealed the formation of three layers on top of the Si substrate.
Published Version
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