Abstract
Abstract The effect of plasma treatment on AlScN films measured by angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) is investigated. I It was confirmed that oxygen plasma treatment of AlScN tends to increase the oxide component relative to the nitride component in the film. The increase in the on/off ratio of the current in the MIM capacitor was attributed to the decrease in the number of nitrogen vacancies in AlScN. The decrease in the on/off ratio after further plasma oxidation treatment is due to the change from nitride to oxide film material on the surface side. It was also confirmed that the nitriding pretreatment for 1 min makes AlScN less susceptible to oxidation. Furthermore, the inhibition of oxidation was more pronounced for Sc atoms than for Al atoms. This suggests that the nitridation process reduced the number of nitrogen vacancies around Sc atoms.
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