Abstract
In this work, we investigate the resistive switching behaviors of HfO2-based resistive random-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si stack are conducted by atomic force microscopy (AFM). A similar thickness is confirmed by scanning electron microscope (SEM) imaging. The surface roughness of the HfO2 film by O3 (O3 sample) is smoother than in the sample by H2O (H2O sample). Next, we conduct electrical characteristics by current–voltage (I–V) and capacitor–voltage (C–V) curves in an initial process. The forming voltage of the H2O sample is smaller than that of the O3 sample because the H2O sample incorporates a lot of H+ in the film. Additionally, the smaller capacitor value of the H2O sample is obtained due to the higher interface trap in H2O sample. Finally, we compare the resistive switching behaviors of both samples by DC sweep. The H2O sample has more increased endurance, with a smaller on/off ratio than the O3 sample. Both have good non-volatile properties, which is verified by the retention test.
Highlights
Oxygen Precursor on ResistiveResistive switching is a physical behavior where at least two conductance levels are reversible with non-volatile properties in the metal–insulator–metal structure [1,2,3,4]
The memristive switching behaviors of HfO2-based resistive random-access memory (RRAM) is studied in two different oxidant precursors (H2O and O3) in the atomic layer deposition (ALD) technique
The surface characterization of the Ni/HfO2/Si RRAM device is performed by atomic force microscopy (AFM)
Summary
Resistive switching is a physical behavior where at least two conductance levels are reversible with non-volatile properties in the metal–insulator–metal structure [1,2,3,4]. RRAM includes a lot of materials, including metal oxide, metal nitride, silicon-based materials, and organic materials that exhibit various unipolar and bipolar resistive switching behaviors [2]. Phasechange random-access memory (PRAM) shows unipolar resistive switching in which the phase of Ge2 Sb2 Te5 can be reversible by a heater such as TiN [5]. Magnetoresistive randomaccess memory (MRAM) shows resistance change by controlling the magnetization of magnetic material [6]. Metal-oxide-based RRAMs such as HfO2 and TaOx show superior performance in terms of endurance, retention, the uniformity of switching parameters, and reproducibility over other material systems [41,42]
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