Effect of Sputtering Power on the Properties of TaN Thin Films Prepared by the Magnetron Sputtering

Abstract

Objective To research the effect of sputtering power on the deposition rate, structure and surface roughness of TaN thin films prepared by the magnetron sputtering that directly bombardment the TaN target. Methods In this paper, TaN thin films were deposited on SiO2 substrates by a reactive radio frequency magnetron sputtering system that directly bombardment the TaN target under different sputtering powers at room temperature. The thickness of the films is obtained by cross-sectional scanning electron microscopy (SEM) views. The phase structure and surface roughness of TaN film is investigated by X-ray diffraction and atomic force microscopy. Results The results show that the film deposition rate increases with the increasing sputtering power, and sputtering power expresses a good linear relationship with deposition rate. X-ray diffraction (XRD) results showed that the film is amorphous when the sputtering power is 100W, and crystallization effect will be getting better with the increasing power without heat treatment. Also, the films display excellent (111) crystalline orientation compared with the conventional reaction sputtering. Atomic force microscope (AFM) results showed that the effect of sputtering power on the surface roughness of the films is complicated. When the puttering power is less and greater than 200W, the surface roughness increases with increasing power. However, the surface roughness is relatively small when the power is 200W. Conclusion The film prepared by magnetron sputtering is compact and smooth, and exhibits fine adhesion. Sputtering power has an important influence on the deposition of TaN films. When the sputtering power is 200W, films with good performance can be obtained.