Abstract
AbstractThe effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n‐ and p‐GaN, as well as n‐AlGaN. In n‐GaN, the as‐deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10–7 Ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 °C in argon. The I–V characteristics of the Ti/Al contacts degraded when plasma treatments were performed for a longer time and/or at increased plasma pressure. However, in contrast to n‐GaN, the electrical properties of the Ni/Au contacts to p‐GaN and Ti/Al contacts to n‐Al0.15Ga0.85N deteriorated following oxygen plasma treatment. X‐ray photoelectron spectroscopy (XPS) was used in order to help elucidate the mechanisms behind these effects. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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