Abstract
Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1h, 2h, 3h and 4h, respectively, and then pre-sintered at 950°C. Finally, they were sintered at 1800°C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB2 and B4C. TiB2 and B4C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiOxCy. After high temperature annealing at 1500°C, 1600°C and 1700°C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500°C).
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