Abstract
A far infrared (FIR) optical study has been carried out at 4.2°K on large gate area (100) Si-MOSFETs whose oxides were purposely contaminated with mobile Na + ions (“impurities”) during processing. At high inversion layer densities the intersubband resonance linewidths as a function of positive oxide charge density are found to be correlated with the corresponding scattering rates determined from the effective mobilities. These results are in good agreement with a calculation for short range scatterers.
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