BSIM3 based RTS and 1/f noise models suitable for circuit simulators

Abstract

In this work, BSIM3 compatible 1/f and RTS noise models have been developed. These new formulations are based upon the effects of band-bending fluctuations associated with single carrier trapping. The new model may be used to determine the oxide trap density N/sub t/(E/sub fn/) responsible for 1/f noise directly. To model the bias dependence of 1/f noise for an arbitrary gate geometry, N/sub t/(E/sub fn/) is first determined for a large (10 /spl mu/m/spl times/10 /spl mu/m) gate area device. The large gate area N/sub t/(E/sub fn/) is used with binned BSIM3 parameters to model the bias dependence of 1/f noise for arbitrary gate geometries. This technique has led to very accurate modeling of the bias and geometry dependence of 1/f noise. The perturbation noise model is also useful in exploring the effects of gate oxide stress upon trap generation and has been used to probe the N/sub t/(E/sub fn/) dependence upon hot electron stress, Fowler-Nordheim stress and plasma etching induced oxide degradation in antenna devices.