Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films

Abstract

(Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 (BSTZ) films are deposited on a Pt/Ti/SiO2/Si substrate at room temperature. KrF excimer laser annealing (ELA) technology is used to treat the BSTZ films, and the effect of laser energy power on the dielectric and electrical characteristics of ELA-treated BSTZ films is investigated in this study. Atomic force microscopy (AFM) observation shows that the BSTZ films decrease in roughness as the laser energy power increases. The leakage current density of ELA-treated BSTZ films markedly decreases as the laser energy power increases from 0 mJ/cm2 (no ELA treatment) to 200 mJ/cm2, and it decreases slightly as the laser power is further increased. The dielectric constants of ELA-treated BSTZ films first increase, reach a maximum, and then slightly decrease with increasing of laser energy power.