Abstract
Effects of the ion species on the formation of defect clusters in high-purity aluminium were investigated by electron microscopy after irradiation with hydrogen, helium, oxygen and argon ions. For irradiations of relatively low fluences, of the order of 10 13 to 10 14 ions/cm 2, the formation of dislocation loops of interstitial type and small cavities was observed to be similar for all the ions used. For high fluence irradiations, of the order of 10 16 ions/cm 2, pronounced differences in the growth behaviour of cavities were observed for different ion species. For oxygen, small cavities increased in number but not in size with increasing fluences. Under hydrogen, helium and argon ion irradiation remarkable cavity growth occurred for particular ranges of irradiation temperatures characteristic of ion species. The observed cavity growth behaviour was interpreted in terms of the formation and mobility of the injected gas atom-vacancy complex.
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