Abstract
Secondary defects induced by ion and electron irradiation up to 6 dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60 keV) irradiation, voids were observed. However, for high-energy electron (2 MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8 × 1014 voids/m2 and 3 × 1014 loops/m2) after irradiations at the same damage level of 6 dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.