Abstract
A nitride layer was formed on a SiC surface by direct nitridation in NH3 or N2. The surface was characterized by X-ray photoelectron spectroscopy (XPS). The thickness of the nitride layer was estimated to be less than 2 nm. The metal–insulator–semiconductor (MIS) Schottky diode was formed on SiC using the nitride layer as the interface layer to estimate the interface state density between the nitride layer and the SiC substrate from the diode factor n. The interface state density was on the order of 1011–1012 eV-1·cm-2 at 0.3 eV below the conduction band edge. A SiO2 film was deposited on the nitridation layer to form an MIS diode. The interface state density of the SiO2/nitride/SiC sample was lower than that of the MIS Schottoky diode.
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