Abstract
In the present work, we study the growth by molecular beam epitaxy of InAsself-assembling quantum dots (SAQDs) on GaAs(100) substrates subjected to an in situannealing treatment. The annealing process consists of the exposition of the GaAsbuffer layer surface to high temperatures for a few seconds with the shutter of anarsenic Knudsen cell closed. The purpose of the annealing is to obtain a betteruniformity of the SAQD sizes. In our study we prepared different samples using theStranski–Krastanov growth method to obtain InAs/GaAs(100) quantum dot sampleswith different annealing times and temperatures. Their structural and opticalproperties were studied by reflection high-energy electron diffraction (RHEED),high-resolution scanning electron microscopy (HRSEM), atomic force microscopy (AFM),and photoreflectance spectroscopy (PR). According to the results of AFM andHRSEM, by the thermal treatment we obtained a better distribution of quantum dotsizes in comparison with a reference sample with no treatment. The PR spectrafrom 0.9 to 1.35 eV presented two transitions associated with SAQDs. The energytransitions were obtained by fitting the PR spectra using the third derivative model.
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