Abstract
Minority carrier lifetime in 60Co gamma-irradiated silicon bulk crystals is examined by photovoltaic effect of silicon p-n junction, and following results are disclosed. 1) Damage constant, K, increases with impurity concentration of bulk crystals. K is smaller in p-type crystals than in n-type. 2) For isochronal annealing, recovery stages of n-type bulk crystals at 100–150°C and 300°C are found. In p-type crystals, reverse annealing is observed at 200–300°C. 3) From the temperature dependence of carrier lifetime, energy levels of the recombination centers at Ec-0.42 for n-type and Ev+0.32, Ev+0.25 eV for p-type crystals are found. 4) Recovery stage of p-type bulk crystals due to gamma irradiation at 81 K is observed at about 150 K, but that of n-type is not observed between 80 and 300 K. 5) The lifetime degradation in p-type crystals due to gamma irradiation at 81 K is reduced when minority carrier is injected after the irradiation.
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