Abstract
To find a solution to the problem that antiferroelectric materials could not be used in thick-film based uncooled infrared detectors because of their high sintering temperature, Pb0.87Ba0.1La0.02(Zr0.7Sn0.24Ti0.06)O3+6wt%PbO antiferroelectric ceramics were first prepared at 1000°C by using 0.8PbO–0.2B2O3 glass as a sintering aid. The results showed that the addition of 0.8PbO–0.2B2O3 sintering aids was beneficial for reducing the sintering temperature without deteriorating the electric properties when the content of glass was practical. The ceramics containing 1wt% 0.8PbO–0.2B2O3 sintering aids demonstrated optimal electrical field induced pyroelectric properties. The largest pyroelectric coefficient of 6100μC/m2K and figure of merit of 17×10−5Pa−0.5 were obtained in Pb0.87Ba0.1La0.02(Zr0.7Sn0.24Ti0.06)O3+6wt%PbO antiferroelectric ceramics with 1wt% glass doping, which can be comparable to that of conventional phase transition materials at a high temperature sintering. The large pyroelectric coefficient and figure of merit of low temperature sintered antiferroelectric ceramics provide a basis for antiferroelectric materials used in thick-film based infrared detectors.
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