Abstract

We theoretically investigate the effects of the excitation frequency on the plateau of high-order terahertz sideband generation (HSG) in semiconductors driven by intense terahertz (THz) fields. We find that the plateau of the sideband spectrum strongly depends on the detuning between the near-infrared laser field and the band gap. We use the quantum trajectory theory (three-step model) to understand the HSG. In the three-step model, an electron–hole pair is first excited by a weak laser, then driven by the strong THz field, and finally recombined to emit a photon with energy gain. When the laser is tuned below the band gap (negative detuning), the electron–hole generation is a virtual process that requires quantum tunneling to occur. When the energy gained by the electron–hole pair from the THz field is less than 3.17 times the ponderomotive energy (Up), the electron and the hole can be driven to the same position and recombined without quantum tunneling, so that the HSG will have large probability amplitude. This leads to a plateau feature of the HSG spectrum with a high-frequency cutoff at about 3.17Up above the band gap. Such a plateau feature is similar to the case of high-order harmonics generation in atoms where electrons have to overcome the binding energy to escape the atomic core. A particularly interesting excitation condition in HSG is that the laser can be tuned above the band gap (positive detuning), corresponding to the unphysical ‘negative’ binding energy in atoms for high-order harmonic generation. Now the electron–hole pair is generated by real excitation, but the recombination process can be real or virtual depending on the energy gained from the THz field, which determines the plateau feature in HSG. Both the numerical calculation and the quantum trajectory analysis reveal that for positive detuning, the HSG plateau cutoff depends on the frequency of the excitation laser. In particular, when the laser is tuned more than 3.17Up above the band gap, the HSG spectrum presents no plateau feature but instead sharp peaks near the band edge and near the excitation frequency.

Highlights

  • High-order harmonic generation (HHG) results from the interaction of an intense laser with atoms or molecules

  • The three-step model was established to describe the physical processes of HHG [3, 4, 5]: The strong laser field tilts the binding potential and the electron escapes from the charged core of the atom or molecule through quantum tunneling; the electron is accelerated in the free space by the laser field; when the electron recollides with the charged core, a very energetic photon is emitted

  • A fundamental difference between HHG in atoms and high-order teraherz sideband generation (HSG) in semiconductors is that the electron-hole (e-h) pairs in HSG are elementary excitations caused by NIR lasers

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Summary

Introduction

High-order harmonic generation (HHG) results from the interaction of an intense laser with atoms or molecules. High-order teraherz sideband generation (HSG) in semiconductors was predicted [6], which has a physical mechanism similar to HHG but occurs at a very different frequency range. A fundamental difference between HHG in atoms and HSG in semiconductors is that the electron-hole (e-h) pairs in HSG are elementary excitations caused by NIR lasers. In HSG, the laser frequency Ω can be tuned from below to above the semiconductor bandedge Eg, and correspondingly, the initial energy of the e-h pairs generated by the NIR laser can be tuned from negative to positive relative to the bandedge. (1a) and (1b) and depend on the detuning This characteristic indicates that the HSG spectrum may be modified by tuning the frequency of the excitation laser

Model and Numerical Simulation
Summary
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