Abstract
Titanium nitride (TiN) thin films are used for the fabrication of superconducting devices due to their chemical stability against oxidization and high quality at interfaces. The high-pressure technique serves as a useful tool to understand the mechanical and electrical properties of materials, which is crucial for practical applications. However, high-pressure transport measurements of thin films are extremely difficult due to the limited sample space of high-pressure cells and the fragility of thin films. Here, we successfully carried out high-pressure electrical transport and Raman measurements on TiN films up to ∼50 GPa. The superconducting transition temperature gradually decreases with increasing pressure, which can be attributed to the decrease of electron -phonon coupling and is consistent with our first-principles calculations. In addition, the coexistence of a symmetry-enforced Dirac nodal chain and a nodal box is revealed by our calculations in TiN. Our work provides a promising way to study the physical properties of thin films at high pressure, which would broaden the high-pressure research field.
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