Abstract
In a semiconductor illuminated by a strong terahertz (THz) field, the electron-hole pairs excited by linear polarized near-infrared (NIR) laser can recombine to emit high-order THz sideband. Previous experimental results have shown, under the same condition of excitation intensity, the polarization direction of the NIR laser could affect the sideband intensity. In this letter, we theoretically investigate the effect of the NIR laser polarization direction on high-order terahertz sideband generation in bulk GaAs.
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