Abstract
Emitter structure effects on the microwave characteristics of AlGaAs/GaAs HBTs have been investigated. Cutoff frequency and maximum oscillation frequency were changed with emitter dimension, and this was attributed to the variation of resistances and junction capacitances with emitter structure. Emitter perimeter and junction area also affected the high frequency performance of HBTs. To enhance the RF characteristics of HBTs, it is necessary to minimize the intrinsic emitter–collector transit time as well as the parasitic components.
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