Effects of different buffer layers on the electro-luminescence performances in white organic light-emitting diodes

Abstract

Abstract The effects of different hole injection materials as the buffer layer on the electro-luminescence (EL) performances of white organic light-emitting diodes (WOLEDs) are investigated in detail. It is found that the EL performances and electric properties were strongly dependent on the structure of the used hole injection materials with different thicknesses, which directly affected the injection and transport properties in devices, and thus the EL efficiency and lifetime. It can be seen that a hybrid buffer layer of 5 nm aluminum fluoride (AlF 3 )/15 nm 4,4′,4″-tris(3-methylphenylphenylamino) (m-MTDATA) as the hole injection buffer layer shows the best EL performances in efficiency and lifetime, showing a promising hole injection material in WOLEDs. The mechanisms behind the enhanced performance of the hybrid buffer layer in WOLEDs are discussed based on X-ray photoelectron spectroscopy (XPS) measurement.