Abstract
In the present investigation we study the effects of film-deposition time duration on thermal diffusivity (α) of hydrogenated amorphous carbon (a-C:H) thin-films grown in a radio-frequency (RF) plasma enhanced chemical vapor deposition system. A set of films was deposited at 50 W RF power for 40, 60, 80, and 100 min. Film characteristics were determined from the optical transmission spectroscopy, Fourier Transform Infrared spectroscopy, and Raman spectroscopy. Thermal diffusivity of a-C:H films was evaluated using the optical pump-and-probe technique on the aluminum-coated samples. Results show a trend of increase in α as the deposition time increases due to the microstructural changes associated with longer exposure to ion bombardment effects on the growth surface of the films.
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