Abstract
Thermal diffusivity (α) of hydrogenated amorphous carbon (a-C:H) thin-films was characterized using the picosecond thermoreflectance measurement technique in the present study. The samples were fabricated in a plasma enhanced chemical vapor deposition system with varying radio frequency (RF) discharge powers from 15 to 70 W. Chemical bonding properties of the a-C:H films were determined from the Fourier transform infrared spectra and Raman spectroscopy. Results show that α is enhanced from 0.07 to 0.20 mm2 s−1 as the RF power increases. It attributes to the dehydrogenation of film resulting from the bombardment of high-energy ion species that breaks C–H bonds at the lower power regime. Particularly at the highest RF power, however, the increase of α is more influenced by the restructuring of bonding configuration associated with the breaking up of sp2 clusters into smaller ones.
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