Abstract
The channel process to further improve the performance of bottom gate hafnium-doped zinc oxide (HZO) thin-film transistors (TFTs) is optimised. The effects of channel thickness on the electrical performances of HZO TFTs is studied. The results show that the extracted saturation mobility increases first and then decreases with the increase of HZO film thickness, reaching maximum when the channel thickness is optimum. The dependence of the optimum thickness on channel length is studied and it is found that optimum thickness increases with the increase of channel length.
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