Abstract
AbstractIn this paper, high‐performance fully transparent bottom‐gate type Ga‐doped zinc oxide thin‐film transistors (GZO TFTs) have been successfully fabricated on glass substrate. The effects of channel thickness on the electrical performances of GZO TFTs are researched. We study to improve the performance of bottom gate Ga‐doped Zinc Oxide Thin Film Transistors by optimizing the active layer process. Optimized TFTs exhibit excellent electrical properties, with high Ion/Ioff current ratio of 1.3 × 109, saturation mobility (μsat) of 99 cm2/Vs, subthreshold swing (SS) of 77mV/decade and threshold voltage (Vth) of 2.2 V. The variation trend of Ion/Ioff, μsat, SS, and Vth against channel thickness is analyzed in detail. The experimental results suggest that the performance of GZO TFT can be improved effectively by optimum channel thickness.
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