Abstract
This paper proposes the effects of chamber pressures on the passivation layer of hydrogenated nano-crystalline silicon (nc-Si:H) mixed-phase thin film using microwave annealing (MWA) to achieve a high-quality thin film. The use of 40.68 MHz very-high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) deposited the nc-Si:H mixed-phase thin film on the top and bottom of the n-type crystalline silicon substrate. The chamber pressures (0.2, 0.4, 0.6, and 0.8 Torr) of the VHFPECVD were critical factors in controlling the carrier lifetime of the symmetric structure. By using the VHFPECVD to deposit the nc-Si:H and using the MWA to enhance the quality of the symmetric structure, the deposited nc-Si:H’s properties of a crystalline volume fraction of 29.6%, an optical bandgap of 1.744 eV, and a carrier lifetime of 2942.36 μs were well achieved, and could be valuable in thin-film solar-cell applications.
Highlights
Thin-film solar cells are being increasingly adopted as a pollution-free power source
Surface passivation is crucial for achieving high-conversion-efficiency crystalline silicon solar cells [1]
Some studies reported the deposition of hydrogenated nano-crystalline silicon passivation layer thin films [3,4,5,6,7]
Summary
Thin-film solar cells are being increasingly adopted as a pollution-free power source. Some studies reported the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) passivation layer thin films [3,4,5,6,7]. It was reported that a high deposition rate (>4 Å/s) and high pressure (>0.1 Torr) of VHFPECVD are effective for growing high-quality μc-Si:H films [20,21,22,23,24]. Nc-Si:H was deposited through VHFPECVD at a ratio (H2/SiH4) of 23%; a total flow rate of 50 sccm; a substrate temperature of 150 ◦C; chamber pressures of 0.2, 0.4, 0.6, and 0.8 Torr; and a power density of 40 mW/cm. Nc-Si:H was deposited through VHFPECVD at a ratio (H2/SiH4) of 23%; a total flow rate of 50 sccm; a substrate temperature of 150 °C; chamber pressures of 0.2, 0.4, 0.6, and. 0.2 without co1n5ta0cts was meas5u0red with a S1i8n0ton WCT-120 l4if.3et2ime tester. 25.43
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