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Abstract
Plasma parameters are important factors for fabricating intrinsic (i-type) layers of hydrogenated amorphous silicon (a-Si:H) films using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system. In this work, the effects of hydrogen ratio (R), power density, pressure, electrode instances (Ed) and substrate temperature (Ts) on the growth and the properties of intrinsic amorphous silicon (i-type a-Si:H) thin films are investigated. The structural defect (micro void fraction: R*) and optical band gap (Eg) can be controlled by changing the plasma conditions. High quality i-type a-Si:H is obtained with low power, pressure, moderate hydrogen ratio (R&9552;H2/SiH4: 4) and short electrode distance conditions at which a lot of SiH3 radicals are generated. When the substrate temperate is above 200°C, hydrogen effusion decreases SiH bonding and optical band gap of 1.74eV is obtained.The properties of i-type a-Si:H depending on plasma conditions show hydrogen content (C(H))=6–11%, R*=0–0.2 and Eg=1.74–1.86eV. The properties of region of low structural defect and good passivation represent C(H)=about 10 at.%, R*=0 and Eg=1.77eV.
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