Abstract
In this letter, we demonstrate three-dimensional (3D) stacked InGaAs high-electron-mobility transistors (HEMTs) on Si with back metal for a monolithic 3D RF platform. The devices are fabricated through a wafer bonding technique and the back metal is inserted during the 3D integration process. We investigate the effect of the back metal on the DC and RF performance of 3D stacked InGaAs HEMTs, which are essential to implement the monolithic 3D RF platform. Furthermore, we obtained a current gain cutoff frequency ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 307 GHz and a maximum oscillation frequency ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> ) of 765 GHz even though it is a 3D stacked device with back metal. The <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> value is the highest ever reported in 3D stacked RF transistors.
Published Version
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