Effects of Annealing Pressure and Ambient on Thermally Robust RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

Abstract

We study the effects of annealing ambient and pressure (vacuum at the pressure of 6.67×10-3 Pa, N2 and Ar at the pressure of 101.3 kPa) on the electrical and material characteristics of RuOx Schottky diodes. With annealing in vacuum at 800 oC for 1 minute, the effective SBH of RuOx Schottky contacts decreases by ~0.208 eV and the reverse leakage current increases by about one order of magnitude with respect to those of contacts without annealing. In contrast, with annealing in Ar, the SBH increases by ~0.207 eV and the reverse leakage current decreases by about 100 times. Annealing in N2 yields the same results as annealing in Ar, and this indicates that N2 is unlikely to react with RuOx and the annealing pressure plays a critical role for the changes in the electrical and material characteristics of RuOx Schottky diodes.