Abstract
Au/n-GaAs Schottky Barrier Diodes (SBDs) have been fabricated on LEC grown silicon doped (100) GaAs single crystals. The SBDs were irradiated using high energy (120 MeV) silicon ion with fluences of 1 × 10 11 and 1 × 1012 ions/cm2. Current-Voltage (I-V) characteristics of unirradiated and irradiated diodes were analyzed. The change in the reverse leakage current increases with increasing ion fluence. This is due to the irradiation induced defects at the interface and its increase with the fluence. The diodes were annealed at 573 and 673 K. to study the effect of annealing. The rectifying behavior of the irradiated (fluence of 1 × 1012 ions/cm12) SBDs improves upon as the annealing temperature increases and is attributed to the in situ self-annealing during irradiation. Scanning Electron Microscopic analysis was carried out on the irradiated samples to delineate the projected range and to observe defects.
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