Abstract
Titanium oxide (TiO2) high-k dielectric layers were deposited on the Si0.3Ge0.7 substrates by plasma enhanced chemical vapor deposition (PECVD) at low temperature (150°C). To study the effects of annealing on the electrical properties, the TiO2 films were annealed in pure nitrogen ambient in the temperature range of 400–600°C. Good electrical performance for the gate dielectrics was observed for the dielectric films annealed up to 500°C, in terms of interface state density, leakage current, and charge trapping properties. Annealing at 600°C is found to degrade the electrical properties due to Ge segregation and subsequent diffusion into the TiO2 layer. Schottky emission was found to be the dominant leakage current conduction mechanism in PECVD TiO2 films.
Published Version
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