Abstract
Abstract Strontium titanate–niobate (SrNb x Ti 1− x O 3 ) film deposited on SiO 2 /Si substrate by argon ion-beam sputtering technique is used to fabricate thin-film resistors by standard integrated-circuit technology. Effects of annealing conditions on their humidity-sensing characteristics were studied. Four cases were considered: 400 °C 20 min in N 2 ; 400 °C 20 min, 400 °C 4 h and 600 °C 4 h in O 2 . Experimental results showed that, as compared to the N 2 -annealed device, the O 2 -annealed devices have higher humidity sensitivity and faster response. Based on scanning electron microscope (SEM) study and adsorption-isotherm analysis, it can be concluded that oxygen annealing is helpful for grain growth, thus resulting in a higher porosity of the film. Among the four cases, 400 °C 4 h in O 2 is the best annealing condition, which gives rise to the highest porosity and an appropriate pore-volume distribution for improving the humidity sensitivity.
Published Version
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