Abstract
The optical characteristics of barium–strontium titanate–niobate(Ba1−xSrxNbyTi1−yO3) thin-film resistor are investigated and the effects of annealing gas and annealingtemperature on photoelectrical properties are studied. Experimental results show thatBa1−xSrxNbyTi1−yO3 thin films are highly sensitive not only to visible light, but also to ultraviolet light. As compared toN2-annealeddevices, O2-annealed devices have higher photosensitivity and lower dark current. Moreover, the photosensitivityof the O2-annealed devices is reduced for higher annealing temperature. Based on scanning electronmicroscope (SEM) study and grain-boundary theory, it can be concluded that400 °C inO2 is the optimal annealing condition, which can give a photosensitivity as high as 8400% tovisible light and 5500% to ultraviolet light.
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