Abstract
The SiOx-based resistive random access memory (RRAM) is reported as the gas sensor with the spontaneous response i.e. memory window closure as air-vacuum switches, meanwhile enlarged the switching voltages in the vacuum. The HfOx/SiOx stacked structure is proposed with a superior resilience with response to ambient changes through inserting an interface structure, which attributed to the gain of the source of high defect density and Hf-encapsulation of the filamentary region as compared to single layer SiOx structures. Besides, the intrinsic nonlinear behavior is demonstrated by integrating a low dielectric layer, which suppresses the sneak path issues for large-scale SiOx-based RRAM crossbar array implementation in near future.
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