Abstract
The authors have investigated the effects of Al doping and annealing on the photoemission spectra and thermal stability of Y2O3∕Si gate stacks by photoemission spectroscopy and x-ray absorption spectroscopy. They have found that the SiO2 components diffuse into the Y2O3 layer by annealing, resulting in the formation of Y silicate; however, the formation of metallic Y silicide is not observed. The changes in valence- and conduction-band offsets by doping Y2O3 with Al with respect to both Al concentration and annealing temperature have been systematically investigated. With an increase in the Al concentration, the band offsets and band gaps increase and the conduction-band edges change nonlinearly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
