Abstract
The effects of a hot two-dimensional electron gas (2 DEG) on optical properties of modulation-doped GaAs/AlGaAs heterostructures have been investigated by photoluminescence (PL) and optically detected cyclotron resonance (ODCR) techniques. A decrease of the PL intensity from shallow excitons and an enhancement of the interband recombination between the 2 DEG (confined in a notch potential near the heterointerface) and photo-excited holes are observed, when the cyclotron resonance (CR) condition for electrons is fulfilled. The mechanisms responsible for these observations are discussed in terms of a hot 2 DEG heated in the microwave (MW) field. The angular dependence of the ODCR peak proves the 2D character of the corresponding hot electrons. In this way the authors identify these PL emissions as arising from the same GaAs active layer.
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