Abstract
Enhancing C54 TiSi2 phase formation and reducing its formation temperature are two key issues in ultralarge-scale integration semiconductor industry. This work demonstrated that the formation of C54 TiSi2 phase can be effectively enhanced and the processing temperature can be reduced by 150–200 °C through multi-thermal-shock processing. The result shows that the resistivity of the TiSi2 compound decreased with increasing thermal shock frequency and consequently reached 15.90 μΩ cm at 600 °C. It is believed that the enhancement of C54 phase formation is due to the increase of internal energy of C49 crystals, which is caused by multi-thermal-shock processing.
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