Abstract
A positive flatband voltage shift, , with respect to unimplanted portions of the same wafer was obtained when calcium was implanted into 87 nm of thermally grown oxide on an n‐type <100> substrate and annealed. It was further determined that calcium acts as a low efficiency n‐type dopant (<0.1% activated); this eliminates the possibility of calcium interactions in the n‐type substrate causing the flatband behavior. Theoretical calculations on a model structure predict an effective negative charge at the interface due to calcium incorporation in agreement with the general behavior observed experimentally. The calculations, moreover, predict that aluminum and strontium will behave in a similar fashion to calcium. The prediction with regard to aluminum appears to be verified by recent experimental work.
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